| PART |
Description |
Maker |
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SD1313 E001105 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1759 A5800340 2SC4620 2SC4505 2SA1759T100P |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
High-Voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A)
High-Coltage Switching Transistor
|
ROHM
|
| 2SD2584 EE08394 |
HIGH POWER SWITCHING APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
|
http://
TOSHIBA[Toshiba Semiconductor]
|
| HAT1055R HAT1055RJ |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ550 2SJ550L 2SJ550S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
http://
|
| GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http://
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MP4501 |
N CHANNEL MSO TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| 2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| QM75DY-24B |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
